PSX307/PSX307A Plasma Cleaner
The PSX307 Plasma Cleaner’s parallel plate chamber technology delivers superior etch uniformity over conventional batch systems. Experience surface cleaning before wirebond or flip-chip attach and surface activation and improved underfill wettability and mold encapsulation.
The PSX307A variant supports both wafer-level processes and traditional substrate device-level processes. Surface modification of wafer before Insulation Layer, after Redistribution Layer, ball attach or after dicing to improve the die attach process.
- Parallel plate technology enabling uniformity
- Substrate or 300mm Wafer, with or without dicing frame
- Patented Plasma Monitor (real-time)
- Unit level process traceability
- Argon, Oxygen or mixed process gas options
Featured Specs
| SKU | NM-EFP1A/NM-EFP3A |
|---|---|
| Model ID | PSX307 |
| Model No. | NM-EFP1A |
| Cleaning Method | Parallel plate RF back-sputtering method |
| Gas for Electrical Discharge * | Ar [option : O2] [*1] |
| Substrate Dimensions (mm) * | L 50 x W 20 to L 250 x W 75 [*2] incl. S type option L 50 x W 20 to L 330 x W 120 incl. M type option |
| Substrate Thickness (mm) | 0.5 to 2.0 |
| Dimensions (mm) / Mass * | W 930 x D 1,100 x H 1,450 / 555 kg W 1,764 x D 1,100 x H 1,450 / 850 kg incl. S type option W 1,764 x D 1,100 x H 1,450 / 770 kg incl. M type option [*3] |
| Power Source * | 1-phase AC 200 V, 2.00 kVA [Full Load 5.00 kVA] [*4] |
| Pneumatic Source | 0.49 MPa or more, 6.5 L/min [A.N.R.] |
| Model ID | PSX307A |
| Model No. | NM-EFP3A |
| Cleaning Method | Parallel plate RF back-sputtering method |
| Gas for Electrical Discharge | Ar [Option : O2, O2 + He] |
| Power Source | 1-phase AC 200 / 208 / 220 / 230 / 240 ± 10 V, 50 / 60 Hz , 6.00 kVA |
| Pneumatic Source | 0.49 MPa, 50 L/min［A.N.R］ |
| Dimensions (mm) | W 900 × D 1,150 × H 1,650 |
| Mass | 630 kg |